Improved GaAs HBT Device Linearity with Flattened Ft Curve

小结

HBT器件的线性主要是由三个方面决定的：1. 跨导，2.Cbc，3.跃度时间。这篇文章研究了HBT器件的Ft曲线平坦度和线性的关系。

In conclusion, with this work we report on a novel epi profile with engineered Ft curve, a more flat Ft with current density, which results in improved device linearity. The new epitaxial structure is very well suited for applications where high device linearity is required.

全文引用自：CS MANTECH Conference, May 19th - 22nd, 2014, Denver, Colorado, USA